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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
-55 % Out Of Stock
40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

Currently Unavailable

₹158
₹350
Ex Tax: ₹158


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Delivery may take 12–15 days due to high order volume and operational delays caused by heavy rain.

Orders placed between 29 July 2025 and 10 August 2025 will be shipped within 2–4 days after confirmation.

Delivery may take 12–15 days due to high order volume and operational delays caused by heavy rain.

Please note: Customer Support will be closed from 29 July to 10 August 2025.

Customer Support | Call/WhatsApp: +91 91306 42220

Product Queries/Support | Custom Orders | Bulk Discounts | Mon–Sat: 11am – 6pm

40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

 

Type Designator: GT40QR21

Marking Code: 40QR21

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 230

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 120

Package: TO3P

Package Include:

1 x 40QR21 Silicon N-Channel IGBT

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