40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
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₹350
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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
Type Designator: GT40QR21
Marking Code: 40QR21
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 230
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
Maximum Gate-Emitter Voltage |Veg|, V: 25
Maximum Collector Current |Ic|, A: 40
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 120
Package: TO3P
Package Include:
1 x 40QR21 Silicon N-Channel IGBT